High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD). - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue ECS Transactions Année : 2009

High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD).

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hal-00457445 , version 1 (17-02-2010)

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  • HAL Id : hal-00457445 , version 1

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A. Claudel, E. Blanquet, D. Chaussende, Roland Martin, D. Pique, et al.. High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD).. ECS Transactions, 2009, 25 (8), pp.323-326. ⟨hal-00457445⟩
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