Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), SI(110) and SI(111) optically evaluated by polarized Raman spectroscopy and imaging. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2010
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hal-00456991 , version 1 (16-02-2010)

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Michel Mermoux, Alexandre Crisci, Francis Baillet, V. Destefanis, V. Rouchon, et al.. Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), SI(110) and SI(111) optically evaluated by polarized Raman spectroscopy and imaging.. Journal of Applied Physics, 2010, 107, pp.013512 1-10. ⟨hal-00456991⟩
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