This paper presents a versatile compact model dedicated to ballistic 1D transistors that are fabricated in very advanced technologies, in order to predict the ultimate performances of novel nano-device-based circuits. The results presented here after are related to MOS like CNTFET and GNRFET thanks to a unified expression of the non parabolic energy dispersion relation NPEDR which enhances other tentative works [1] limited to the parabolic case and to Boltzmann approximation. To warrant the accuracy as well as the flexibility of this compact model for ballistic 1D transistor, we have developed a thermionic charge model based on NPEDR. The NPEDR expression [2] is universal to describe small Si-Nanowire, CNT and GNR materials: (E − sbbd[p])(1+α[p](E − sbbd[p])) = h2k2 ÷ 2m∗[p]