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Article Dans Une Revue Journal of Crystal Growth Année : 2009

Initial transient in Zn-doped InSb grown in microgravity.

Résumé

Three Zn-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS) Alpha. The distribution of the Zn was measured using SIMS. A short diffusion-controlled transient, typical for systems with k > 1 was demonstrated. Static pressure of similar to 4000 N/m(2) was imposed on the melt, to prevent bubble formation and de-wetting. Still, partial de-wetting has occurred in one experiment, and apparently has disturbed the diffusive transport of Zn in the melt.

Dates et versions

hal-00445243 , version 1 (07-01-2010)

Identifiants

Citer

A.G. Ostrogorsky, C. Marin, M.P. Volz, T. Duffar. Initial transient in Zn-doped InSb grown in microgravity.. Journal of Crystal Growth, 2009, 311 (12), pp.3243-3248. ⟨10.1016/j.jcrysgro.2009.03.036⟩. ⟨hal-00445243⟩

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