2D-modelling for the simulation of current voltage characteristics in polysilicon Schottky diode deposited by LPCVD and SAPCVD methods - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue International Journal of nanoelctronics and materials Année : 2009

2D-modelling for the simulation of current voltage characteristics in polysilicon Schottky diode deposited by LPCVD and SAPCVD methods

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hal-00444292 , version 1 (06-01-2010)

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  • HAL Id : hal-00444292 , version 1

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N. Benseddik, M. Amrani, Z. Benamara, Tayeb Mohammed-Brahim. 2D-modelling for the simulation of current voltage characteristics in polysilicon Schottky diode deposited by LPCVD and SAPCVD methods. International Journal of nanoelctronics and materials, 2009, 2 (1), pp.75-89. ⟨hal-00444292⟩
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