160cm2/Vs microcrystalline silicon TFTs mobility thanks to nex deposition process of both Undoped and doped films performed at T<200° C - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2006
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hal-00437491 , version 1 (30-11-2009)

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Khalid Kandoussi, Claude Simon, Nathalie . Coulon, Tayeb Mohammed-Brahim. 160cm2/Vs microcrystalline silicon TFTs mobility thanks to nex deposition process of both Undoped and doped films performed at T<200° C. AM-FPD 2006, Jul 2006, Tokyo, Japan. ⟨hal-00437491⟩
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