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Article Dans Une Revue physica status solidi (c) Année : 2009

Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD)

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hal-00432756 , version 1 (17-11-2009)

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  • HAL Id : hal-00432756 , version 1

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E. Blanquet, D. Chaussende, A. Claudel, D. Pique, M. Pons. Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD). physica status solidi (c), 2009, 6, pp.S348-S351. ⟨hal-00432756⟩
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