Power- or frequency-driven hysteresis for continuous-wave optically injected distributed-feedback semiconductor lasers - Archive ouverte HAL
Article Dans Une Revue Optics Express Année : 2009

Power- or frequency-driven hysteresis for continuous-wave optically injected distributed-feedback semiconductor lasers

Résumé

Bistabilities between a steady (or pulsating, chaotic) and different pulsating regimes are investigated for an optically injected semi-conductor laser. Both numerical and experimental studies are reported for continuous-wave single-mode semiconductor distributed-feedback lasers emitting at 1.55 μm. Hysteresis are driven by either changing the optically injected power or the frequency difference between both lasers. The effect of the injected laser pumping rate is also examined. Systematic mappings of the possible laser outputs (injection locking, bimodal, wave mixing, chaos or relaxation oscillations) are carried out. At small pumping rates (1.2 times threshold), only locking and bimodal regimes are observed. The extent of the bistable area is either 11 dB or 35 GHz, depending on the varying parameters. At high pumping rates (4 times threshold), numerous injection regimes are observed. Injection locking and its bistabilities are also reported for secondary longitudinal modes.

Dates et versions

hal-00429796 , version 1 (04-11-2009)

Identifiants

Citer

Stéphane Blin, Olivier Vaudel, Pascal Besnard, Renaud Gabet. Power- or frequency-driven hysteresis for continuous-wave optically injected distributed-feedback semiconductor lasers. Optics Express, 2009, Vol.17 (Issue 11), pp.9288-9299. ⟨10.1364/OE.17.009288⟩. ⟨hal-00429796⟩
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