Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2004

Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method

Résumé

We present the first investigation of 2 inch diameter 0.5 mm thick 4H-SiC layers grown by the CF-PVT (Continuous Feed-Physical Vapor Transport) method. From Synchrotron White Beam X-Ray Topography we show that no new defect is generated in the CF-PVT material with respect to the 4H-SiC seed. We also show that a large strain takes place at the layer to seed interface which probably comes from the difference in doping level and thus in lattice parameter between the layer and the seed. From Raman experiments we demonstrate a high structural uniformity and low residual doping level. This is a surprising result which comes despite the lack of sophisticated purification procedure. To get confirmation, we have performed SIMS and LTPL investigations.

Domaines

Matériaux
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Dates et versions

hal-00417942 , version 1 (17-09-2009)

Identifiants

Citer

Didier Chaussende, Carole Balloud, Laurent Auvray, Francis Baillet, Marcin Zielinski, et al.. Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method. Materials Science Forum, 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩. ⟨hal-00417942⟩
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