Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue ECS Transactions Année : 2008

Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study

Résumé

We report preliminary results on the Raman characterization of strained-Si films pseudomorphically grown on (001), (110) and (111) SiGe virtual substrates. Because the relation between strain or stress and the Raman frequencies are complex, we first derive the strain-shift coefficients for the different substrate orientations considered in this work. Then, visible and near-UV Raman spectroscopies were used to extract the in-plane lattice parameter of the virtual substrate and the strain in the thin silicon epitaxial layers grown on top. Finally, we investigated the in-plane strain distribution in strained Si/SiGe buffer layers grown on (110) and (111) silicon substrates by Raman imaging. In-plane strain fluctuations are observed both in the epilayer and the virtual substrate for all substrate orientations.

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Matériaux
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Dates et versions

hal-00417180 , version 1 (15-09-2009)

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Citer

Denis Rouchon, Vincent Destefanis, Jean-Michel Hartmann, Alexandre Crisci, Michel Mermoux. Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study. ECS Transactions, 2008, 16 (10), pp. 203-214. ⟨10.1149/1.2986771⟩. ⟨hal-00417180⟩
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