Cryogenic etching of n-type silicon with p+ doped walls with the TGZM process through the Al/Si eutectic alloy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronic Engineering Année : 2009

Cryogenic etching of n-type silicon with p+ doped walls with the TGZM process through the Al/Si eutectic alloy

Résumé

The dry etching of n-type silicon with p+ doped walls was studied with the cryogenic etching directly after the thermomigration process. The selectivity between n-type silicon and p+ doped silicon was first considered in SF6/O2 plasma. No selectivity was observed between these two zones. Thereafter, the capacity of the Al/Si eutectic alloy covered with a thin film of Al2O3 to play the role of hard mask for the etching was confirmed, always in the case of SF6/O2 plasma. Finally, the etching of 50 lm deep trenches through the Al/Si alloy was performed using three different types of process.

Dates et versions

hal-00413753 , version 1 (06-09-2009)

Identifiants

Citer

El-Houcine Oubensaid, Corinne Y. Duluard, Laurianne E. Pichon, B. Morillon, Mohamed Boufnichel, et al.. Cryogenic etching of n-type silicon with p+ doped walls with the TGZM process through the Al/Si eutectic alloy. Microelectronic Engineering, 2009, 86, pp.2262. ⟨10.1016/j.mee.2009.04.002⟩. ⟨hal-00413753⟩
31 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More