State of the art of High Temperature Power Electronics - Archive ouverte HAL
Communication Dans Un Congrès Année : 2009

State of the art of High Temperature Power Electronics

Charles Joubert
Christian Martin

Résumé

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500°C, whereas silicon is limited to 150-200°C. Applications such as transportation or deep oil and gas wells drilling can benefit. A few converters operating above 200°C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).

Domaines

Autre
Fichier principal
Vignette du fichier
microtherm09.pdf (460.54 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00413349 , version 1 (03-09-2009)

Identifiants

  • HAL Id : hal-00413349 , version 1

Citer

Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of High Temperature Power Electronics. Microtherm, Jun 2009, Lodz, Poland. pp.8-17. ⟨hal-00413349⟩
322 Consultations
3054 Téléchargements

Partager

More