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Article Dans Une Revue Thin Solid Films Année : 2009

Reduction of microwave dielectric losses in KTa1−xNbxO3 thin films by MgO-doping

Quentin Simon
Jean-Michel Le Floch
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Fiffamen Houndonougbo
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S. Députier
A. Dauscher
Valérie Madrangeas
Dominique Cros

Résumé

KTa1 − xNbxO3 (KTN) thinfilms were grown by pulsed laser deposition on sapphire and MgO substrates. Their structural and high frequency dielectric characteristics evidenced the strong influence of the substrate and suggested possible KTN/MgO interdiffusion that could be responsible for the lower dielectriclosses obtained on this substrate. Both undoped and 6% MgO-doped KTN thinfilms were then grown on sapphire. Dielectric measurements performed at 12.5 GHz by a resonant cavity perturbation method evidenced reduction of losses by MgO-doping. Loss tangent (tan δ) was reduced by a factor of 3 in comparison with undoped films grown on sapphire.

Dates et versions

hal-00411877 , version 1 (31-08-2009)

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Citer

Quentin Simon, V. Bouquet, W. Peng, Jean-Michel Le Floch, Fiffamen Houndonougbo, et al.. Reduction of microwave dielectric losses in KTa1−xNbxO3 thin films by MgO-doping. Thin Solid Films, 2009, 517 (20), pp.5940-5942. ⟨10.1016/j.tsf.2009.04.022⟩. ⟨hal-00411877⟩
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