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Communication Dans Un Congrès physica status solidi (b) Année : 2009

Electrical transport phenomena in magnesium-doped p-type GaN

Résumé

In this paper we present the resistivity and Hall-effect measurements on p-type GaN doped with Mg. The experiments were carried out as a function of hydrostatic pressure Lip to 1200 MPa in the temperature range 260-400 K. Both bulk GaN crystals as well as GaN: Mg epilayers were studied. In the investigated samples the decrease of resistivity and increase of hole concentration under pressure was observed. Such a behavior, which is contrary to the n-type material strongly suggests a decrease of the ionization energy of Mg acceptor (E-a = 183 meV) with pressure. This shift is very weak, less than -2 meV/GPa. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Dates et versions

hal-00401355 , version 1 (02-07-2009)

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  • HAL Id : hal-00401355 , version 1

Citer

Leszek Konczewicz, Elzbieta Litwin-Staszewska, Sylvie Contreras, Ryszard Piotrzkowski, Leslaw Dmowski. Electrical transport phenomena in magnesium-doped p-type GaN. 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.658-663. ⟨hal-00401355⟩
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