Feasibility of Er3+-doped, Ga5Ge20Sb10S65 chalcogenide microstructured optical fiber amplifiers - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Optics and Laser Technology Année : 2009

Feasibility of Er3+-doped, Ga5Ge20Sb10S65 chalcogenide microstructured optical fiber amplifiers

Résumé

The feasibility of a microstructured optical fiber (MOF) amplifier, made of a novel Er3+-doped chalcogenide glass, has been demonstrated via accurate simulations performed by employing an oppositely implemented computer code. The optical and geometrical parameters measured on the first MOF sample together with other physical constants from literature have been taken into account in the simulations. The calculated optical gain of the optimized MOF amplifier, 2.79 m long, is close to 23 dB at the signal wavelength of 1.538 μm, by using a pump power of 200 mW and a signal power of 0.1 μW.

Domaines

Matériaux

Dates et versions

hal-00400777 , version 1 (01-07-2009)

Identifiants

Citer

M. de Sario, L. Mescia, F. Prudenzano, F. Smektala, Frédéric Désévéday, et al.. Feasibility of Er3+-doped, Ga5Ge20Sb10S65 chalcogenide microstructured optical fiber amplifiers. Optics and Laser Technology, 2009, 41 (1), pp.99-106. ⟨10.1016/j.optlastec.2008.03.007⟩. ⟨hal-00400777⟩
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