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Communication Dans Un Congrès Année : 2007

Analyses of deposition/etching regimes during selective etching of HfO2 on silicon in BCl3 plasmas: Impact of chamber walls

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hal-00400643 , version 1 (01-07-2009)

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  • HAL Id : hal-00400643 , version 1

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E. Sungauer, X. Mellhaoui, E. Pargon, T. Lill, O. R. Joubert. Analyses of deposition/etching regimes during selective etching of HfO2 on silicon in BCl3 plasmas: Impact of chamber walls. 54th International AVS Symposium & Topical Conferences, 2007, seattle, United States. ⟨hal-00400643⟩
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