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Article Dans Une Revue Journal of Applied Physics Année : 2009

Improvement of polycrystalline silicon-Based Thin Film Transistor Performances by Modifying Technological Fabrication Process

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Dates et versions

hal-00399303 , version 1 (26-06-2009)

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  • HAL Id : hal-00399303 , version 1

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Olivier Bonnaud, Tayeb Mohammed-Brahim. Improvement of polycrystalline silicon-Based Thin Film Transistor Performances by Modifying Technological Fabrication Process. Journal of Applied Physics, 2009, 96 (1), pp.259-269. ⟨hal-00399303⟩
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