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Communication Dans Un Congrès Année : 2007

Porous SiOCH Modification by O2, NH3 and CH4 plasmas Used as ashing and Pore sealing Steps

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hal-00398871 , version 1 (25-06-2009)

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  • HAL Id : hal-00398871 , version 1

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Maxime Darnon, T. Chevolleau, N. Posseme, T. David, C. Licitra, et al.. Porous SiOCH Modification by O2, NH3 and CH4 plasmas Used as ashing and Pore sealing Steps. Proceeding of PESM, Plasma Etch and Strip in Microelectronics (Workshop), 2007, leuven, Belgium. ⟨hal-00398871⟩
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