Physical and chemical reactions in chlorine based etching plasmas: influence of plasma-surface interactions - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2008

Physical and chemical reactions in chlorine based etching plasmas: influence of plasma-surface interactions

Fichier non déposé

Dates et versions

hal-00397781 , version 1 (23-06-2009)

Identifiants

  • HAL Id : hal-00397781 , version 1

Citer

G. Cunge, N. Sadeghi, D. Vempaire, M. Touzeau, R. Ramos. Physical and chemical reactions in chlorine based etching plasmas: influence of plasma-surface interactions. 9th Asia-Pacific Conference on Plasma Science and Technology (APCPST) and 21st Symposium on Plasma Science for Materials, 2008, China. ⟨hal-00397781⟩
124 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More