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Article Dans Une Revue Microelectronics Reliability Année : 2007

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

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hal-00393545 , version 1 (09-06-2009)

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  • HAL Id : hal-00393545 , version 1

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G. Beylier, S. Bruyere, D. Benoit, G. Ghibaudo. Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. Microelectronics Reliability, 2007, 47 (4-5), pp.660-664. ⟨hal-00393545⟩
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