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Article Dans Une Revue Microelectronic Engineering Année : 2007

Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memories

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hal-00393156 , version 1 (09-06-2009)

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  • HAL Id : hal-00393156 , version 1

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G. Beylier, S. Bruyère, G. Ghibaudo. Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memories. Microelectronic Engineering, 2007, 84 (9-10), pp.1990-1993. ⟨hal-00393156⟩
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