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Article Dans Une Revue Comptes Rendus. Physique Année : 2008

Optical properties of GaN/AlN quantum dots

Pierre Lefebvre
B. Gayral

Résumé

We present here a review of the peculiar optical properties of GaN/AlN quantum dots. These systems show unusually large exciton binding energies and band-offsets. Moreover, when grown along the (0001) axis in the wurtzite phase, the optical properties are dominated by huge on-axis internal electric fields, leading to a very low oscillator strength and complex dynamical behavior. It is also possible to grow GaN quantum dots in the cubic phase or along nonpolar axis of the wurtzite cell. We discuss properties of ensembles of quantum dots, as well as of single quantum dots studied by micro-photoluminescence.

Dates et versions

hal-00389996 , version 1 (30-05-2009)

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Pierre Lefebvre, B. Gayral. Optical properties of GaN/AlN quantum dots. Comptes Rendus. Physique, 2008, 9, pp.816. ⟨10.1016/j.crhy.2008.10.008⟩. ⟨hal-00389996⟩
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