Communication Dans Un Congrès Année : 2009

Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity

Felix Oehlschlaeger
  • Fonction : Auteur
Herve Peyre
Jean Calmassel
  • Fonction : Auteur
Peter J. Wellmann
  • Fonction : Auteur

Résumé

Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following, work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2" at room- and low temperature in a non-destructive way.

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Dates et versions

hal-00389394 , version 1 (28-05-2009)

Identifiants

  • HAL Id : hal-00389394 , version 1

Citer

Felix Oehlschlaeger, Sandrine Juillaguet, Herve Peyre, Jean Calmassel, Peter J. Wellmann. Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.259-262. ⟨hal-00389394⟩
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