Copper line topology impact on the reliability of SiOCH low-k dielectrics for the advanced 45nm technology node and - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2008

Copper line topology impact on the reliability of SiOCH low-k dielectrics for the advanced 45nm technology node and

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hal-00386235 , version 1 (20-05-2009)

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  • HAL Id : hal-00386235 , version 1

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M. Vilmay, Daniel Roy, C. Monget, F. Volpi, J.M. Chaix. Copper line topology impact on the reliability of SiOCH low-k dielectrics for the advanced 45nm technology node and. Integrated Reliability Workshop (IRW 2008), 2008, United States. ⟨hal-00386235⟩

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