Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements - Archive ouverte HAL
Article Dans Une Revue Microelectronics Reliability Année : 2007

Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements

Résumé

In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DC-DC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techniques such as Iddq or functionality test fail. In addition, a correlation between the noise signature and the nature of the defect is established. In particular, the presence of trapped charges in the oxides is clearly identified.
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Dates et versions

hal-00385697 , version 1 (20-05-2009)

Identifiants

  • HAL Id : hal-00385697 , version 1

Citer

Yuan Gao, Nicolas Guitard, Christophe Salamero, Marise Bafleur, Laurent Bary, et al.. Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements. Microelectronics Reliability, 2007, 47 (9-11), pp.1456-1461. ⟨hal-00385697⟩
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