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Article Dans Une Revue Materials Science Forum Année : 2009

Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy

Résumé

We have investigated through birefiringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds and under different growth conditions. Through self nucleation experiments, the stable growth of very high quality 3C-SiC crystals at high temperature (2100 degrees C) and at high rate (roughly 0.2 mm/h) is demonstrated. The possibility to develop bulk growth of 3C-SiC crystals is discussed.
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Dates et versions

hal-00374734 , version 1 (09-04-2009)

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  • HAL Id : hal-00374734 , version 1

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D. Chaussende, Florian Mercier, R. Madar, M. Pons. Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy. Materials Science Forum, 2009, 600-603, pp.71-74. ⟨hal-00374734⟩
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