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Communication Dans Un Congrès Année : 2008

SiC JFET for high temperature power switches

Résumé

SiC pushes the temperature barrier of semiconductors upwards, clearly over 300°C. JFET are available as engineering samples from SiCED. This paper present the characterisation of such devices : gate behavior, power losses. A demonstrator inverter leg is experimented switching 15A under 540V cooled at 250°C

Domaines

Electronique
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Dates et versions

hal-00373058 , version 1 (03-04-2009)

Identifiants

  • HAL Id : hal-00373058 , version 1

Citer

Dominique Bergogne, Dominique Tournier, Rami Mousa, Mohsen Shafiee Khoor, Dominique Planson, et al.. SiC JFET for high temperature power switches. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4. ⟨hal-00373058⟩
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