High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular beam epitaxy for microwave applications - Archive ouverte HAL Access content directly
Conference Papers Year : 2008

High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular beam epitaxy for microwave applications

S. Joblot
  • Function : Author
Y. Cordier
F. Semond
  • Function : Author
P. Vennegues
  • Function : Author
Sébastien Chenot
  • Function : Author
P. Lorenzini
  • Function : Author
M. Portail
J. Massies
  • Function : Author
J.C. Gerbedoen
A. Soltani
Christophe Gaquière
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Dates and versions

hal-00362029 , version 1 (17-02-2009)

Identifiers

  • HAL Id : hal-00362029 , version 1

Cite

S. Joblot, Y. Cordier, F. Semond, P. Vennegues, Sébastien Chenot, et al.. High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular beam epitaxy for microwave applications. Materials Research Society Spring Meeting, MRS Spring 2008, Symposium C : Advances in GaN, GaAs, SiC, and Related Alloys on Silicon Substrates, 2008, San Francisco, CA, United States. ⟨hal-00362029⟩
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