A novel approach to extract accurate design parameters of PiN diode - Archive ouverte HAL
Article Dans Une Revue International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Année : 2007

A novel approach to extract accurate design parameters of PiN diode

Hervé Morel
Damien Risaletto
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Résumé

Accurate modelling of PiN diode transient behaviour is necessary to extract design parameters which are not documented in datasheets. To meet this requirement, this paper introduces a novel approach giving the possibility to identify accurate parameters of a given device. The used technique is based only on two stages. First, the design parameters are initialized and optimized. Second, they are refined by minimizing the cost function which depends on the transient switching parameters (IRM, VRM and trr). With a simple and CPU time-saving approach this technique leads to extract design parameters without necessarily knowing the exact technological architecture of the PiN diode. Moreover, in order to validate the proposed approach and the parameter extraction procedure three commercial diodes are tested. A good agreement between experimental and simulation data is obtained.

Dates et versions

hal-00358834 , version 1 (04-02-2009)

Identifiants

Citer

Tarek Ben Salah, Sami Ghedira, Hatem Garrab, Hervé Morel, Damien Risaletto, et al.. A novel approach to extract accurate design parameters of PiN diode. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2007, 20 (6), pp.283-297. ⟨10.1002/jnm.646⟩. ⟨hal-00358834⟩
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