Journal Articles
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Year : 2008
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https://hal.science/hal-00356987
Submitted on : Thursday, January 29, 2009-10:42:35 AM
Last modification on : Wednesday, January 24, 2024-9:54:18 AM
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T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, et al.. Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩
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