Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire - Archive ouverte HAL Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2008

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne
  • Function : Author
S. Laügt
  • Function : Author
M. Nemoz
  • Function : Author
P. Vennegues
  • Function : Author
B. Vinter
  • Function : Author
M. Leroux
  • Function : Author
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hal-00356987 , version 1 (29-01-2009)

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T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, et al.. Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩
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