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Article Dans Une Revue Ferroelectrics Année : 2008

Towards the integration of epitaxially grown KTN thin films in silicon technology

Résumé

The use of a high quality SrTiO3 buffer layer was investigated in order to give access to the integration in standard silicon technology of KTa1 - xNbxO3 thin films, grown by pulsed laser deposition. The buffer layer was previously epitaxially grown onto Si substrates by molecular beam epitaxy, using a process implying seed and sacrificial layers of strontium. The 40 nm thick SrTiO3 underlayer acts together as a matching layer, a seed layer and an anti-diffusion barrier, preventing the formation of the undesired competing pyrochlore phase. High crystalline quality perovskite single-phase epitaxial KTa1 - xNbxO3 thin films were reproducibly obtained by the use of this process.
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Dates et versions

hal-00354429 , version 1 (19-01-2009)

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Annie Guiller, Arnaud-Gides Moussavou, Maryline Guilloux-Viry, André Perrin, Jean Fompeyrine, et al.. Towards the integration of epitaxially grown KTN thin films in silicon technology. Ferroelectrics, 2008, 362 (1), pp.95-104. ⟨10.1080/00150190802006319⟩. ⟨hal-00354429⟩
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