Copper diffusion in TaN - based thin layers - Archive ouverte HAL
Article Dans Une Revue Applied Surface Science Année : 2008

Copper diffusion in TaN - based thin layers

Résumé

The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773–973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer.

Domaines

Matériaux

Dates et versions

hal-00351941 , version 1 (12-01-2009)

Identifiants

Citer

J. Nazon, B. Fraisse, J. Sarradin, S. Fries, Jean-Claude Tedenac, et al.. Copper diffusion in TaN - based thin layers. Applied Surface Science, 2008, 254 (18), pp.5670-5674. ⟨10.1016/j.apsusc.2008.03.015⟩. ⟨hal-00351941⟩
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