Elaboration of Ta<sub>2</sub>O<sub>5</sub> Thin Films Using Electrostatic Spray Deposition for Microelectronic Applications - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physical Chemistry C Année : 2007

Elaboration of Ta2O5 Thin Films Using Electrostatic Spray Deposition for Microelectronic Applications

Résumé

The deposition of tantalum oxide thin films on SiOxNy/Si substrates using electrostatic spray deposition was investigated. Different microstructures (dense, reticulated, porous) depending on the process parameters such as the nature of the precursor solution, substrate temperature, nozzle-to-substrate distance, and precursor solution flow rate were obtained. The evolution of film thickness and morphology versus deposition time was discussed. The films deposited at temperatures ranging from 100 to 210 °C were found amorphous. A pure pseudo hexagonal δ-Ta2O5 single phase was identified by X-ray diffraction and Raman spectrocopy after annealing from 650 °C and above.

Domaines

Matériaux

Dates et versions

hal-00333809 , version 1 (24-10-2008)

Identifiants

Citer

Amélie Lintanf, Arnaud Mantoux, Elisabeth Blanquet, Elisabeth Djurado. Elaboration of Ta2O5 Thin Films Using Electrostatic Spray Deposition for Microelectronic Applications. Journal of Physical Chemistry C, 2007, 111 (15), pp. 5708-5714. ⟨10.1021/jp0676585⟩. ⟨hal-00333809⟩
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