Avoiding spurious velocity overshoots in hydrodynamic simulations of deep submicron devices by a physical modelling of heat transport - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Semiconductor Science and Technology Année : 2004

Avoiding spurious velocity overshoots in hydrodynamic simulations of deep submicron devices by a physical modelling of heat transport

Résumé

We show that spurious peaks in velocity profiles emerging from hydrodynamic simulators of submicron n+nn+ Si structures are washed out by using a field-dependent thermal conductivity calculated within a correlation function formalism.

Domaines

Electronique

Dates et versions

hal-00331018 , version 1 (15-10-2008)

Identifiants

Citer

L. Varani, C. Palermo, J.-C. Vaissière, A. Greiner, L. Reggiani. Avoiding spurious velocity overshoots in hydrodynamic simulations of deep submicron devices by a physical modelling of heat transport. Semiconductor Science and Technology, 2004, 19, pp.S142-S144. ⟨10.1088/0268-1242/19/4/050⟩. ⟨hal-00331018⟩
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