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Article Dans Une Revue Applied Physics Letters Année : 2004

Does In-bonding delay GaN-segregation in GaInAsN? A Raman study

T. Tite
  • Fonction : Auteur
O. Pagès
  • Fonction : Auteur
  • PersonId : 1074794

Résumé

The longitudinal (LO) and transverse (TO) optical Ga–N phonons of thick as-grown Ga1–yInyAs1–xNx/GaAs (001) layers with x~3%–4%, i.e., just above the N-solubility limit xs~2% in GaAs, and y up to 30% are studied by Raman scattering. We observe a three-mode behavior which we associate with Ga–N modes from the isolated Ga4N complexes (~460 cm–1), the Ga3InN ones (~480 cm–1) and the GaN-segregated region (~425 cm–1). The corresponding N fractions are derived via combined contour modeling of the three-mode TO and LO Ga–N Raman lineshapes. We find that substantial In-bonding minimizes GaN segregation only in a very narrow x range of ~1% just above xs.

Domaines

Electronique
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Dates et versions

hal-00330630 , version 1 (15-10-2008)

Identifiants

Citer

T. Tite, O. Pagès, E. Tournié. Does In-bonding delay GaN-segregation in GaInAsN? A Raman study. Applied Physics Letters, 2004, 85 (24), pp.5872. ⟨10.1063/1.1829387⟩. ⟨hal-00330630⟩
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