Nanoindentation of Si, GaP, GaAs and ZnSe single crystals
Résumé
We present a systematic study of the mechanical properties of bulk Si, GaP, GaAs and ZnSe semiconducting materials. Nanoindentation tests have been performed on the (001) surface of single crystals and their interpretation has been supported by AFM imaging of the indented surface. For all four materials, hardness and Young's modulus appear to be independent of the orientation of the Berkovich nanoindenter tip relative to the [100] direction. In contrast, hardness varies significantly with the applied load for ZnSe, which is the only material exhibiting large creep. All mechanical properties-plasticity, hardness, Young's modulus-depend on both the interatomic distance and the ionicity of the materials. Si and ZnSe are, respectively, the hardest and the softest materials of the series, the hardness of ZnSe being comparable to that of soft metals.
Mots clés
Transition element compounds
Inorganic compounds
Experimental study
Binary compounds
Zinc selenides
Silicon
Gallium arsenides
Monocrystals
Semiconductor materials
Property structure relationship
Ionic bonds
Interatomic distances
Plasticity
Creep
Applied load
Young modulus
Hardness
Atomic force microscopy
Nanoindentation