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Journal Articles physica status solidi (b) Year : 2005

Carrier profiles in Fe doped GaN layers grown by MOVPE

M. Azize
  • Function : Author
Z. Bougrioa
P. Gibard
  • Function : Author

Abstract

Continuously-doped and modulation-doped GaN:Fe layers were grown by MOVPE using a 2-step process, that promotes first 3D then 2D growth, allowing to achieve low dislocations densities. Two characterization methods were used to analyse the electrical compensation in GaN:Fe. A first study by Hall effect have been performed down to the sapphire substrate thanks to reactive ion etching steps. The local electrical response of GaN:Fe has also been investigated by cross-sectionnal Electrostatic Force Microscopy (EFM), showing that GaN:Fe is efficiently compensated in the first 0.5 to 2 micron next to the substrate. From these measurements it appears that Fe-doping is more efficient when Fe is incorporated in the GaN grown in a 3D than in a 2D growth-mode. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Domains

Electronics

Dates and versions

hal-00328400 , version 1 (10-10-2008)

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M. Azize, Z. Bougrioa, Paul Girard, P. Gibard. Carrier profiles in Fe doped GaN layers grown by MOVPE. physica status solidi (b), 2005, pp.1438-1483. ⟨10.1002/pssc.200461535⟩. ⟨hal-00328400⟩
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