Article Dans Une Revue Electronics Letters Année : 2005

Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range

Résumé

A p-i-n superlattice photovoltaic detector is presented, operating uncooled in the 3-5 μm mid-wavelength infrared region. The active zone of the detector device, grown by molecular beam epitaxy on a p-type GaSb substrate, is made of 150 periods of strain compensated InAs/InSb/GaSb (10/1/10 monolayers) superlattice (SL). The SL detector exhibited at 293 K a cutoff wavelength of 5.9 μm, an absorption coefficient of 5×103 cm-1 and a responsivity of 0.7 mA/W at 3.5 μm.

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Dates et versions

hal-00327783 , version 1 (09-10-2008)

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J.B. Rodriguez, Philippe Christol, A. Ouvrard, F. Chevrier, P. Grech, et al.. Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range. Electronics Letters, 2005, 41 (Issue: 6), pp.362- 363. ⟨10.1049/el:20058045⟩. ⟨hal-00327783⟩
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