Random Telegraph Signal noise : a sensitive and non-destructive tool for gate oxide single trap characterization - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2007

Random Telegraph Signal noise : a sensitive and non-destructive tool for gate oxide single trap characterization

Résumé

This paper presents the electrical characterization of thick and thin SiO2 oxynitride performed by thermal and plasma nitridation processes. The impact of the nitridation technique is investigated using random telegraph signal (RTS) noise analysis. The variation of the gate oxide trap characteristics is determined with respect to the nitridation technique. Significant properties of traps are also pointed out. Main trap parameters, such as their depth with respect to the interface, nature, capture and emission times are extracted. These results illustrate the potential of RTS noise investigation for gate oxide characterizations

Domaines

Electronique

Dates et versions

hal-00327632 , version 1 (09-10-2008)

Identifiants

Citer

C. Leyris, F. Martinez, M. Valenza, A. Hoffmann, J.C. Vildeuil. Random Telegraph Signal noise : a sensitive and non-destructive tool for gate oxide single trap characterization. Microelectronics Reliability, 2007, 47 (4-5), pp.573-576. ⟨10.1016/j.microrel.2007.01.034⟩. ⟨hal-00327632⟩
33 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More