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Article Dans Une Revue Journal of Crystal Growth Année : 2007

High-density InSb-based quantum dots emitting in the mid-infrared

Résumé

We investigate different growth techniques of InSb quantum dots in a GaSb matrix for applications in laser devices operating in the mid-infrared region. We show that conventional molecular beam epitaxy growth does not provide an active medium suitable for device applications, due to the very long migration length of In-adatoms on Sb-terminated surfaces. For this reason, we developed an innovative growth technique, consisting of a deposition at an extremely low temperature followed by a properly designed annealing step. In this way, the In-adatoms mobility is strongly reduced and the control of the island evolution allows us to achieve good morphological and structural properties, with a density of strained and defect-free islands as high as 7×1010 cm−2. These nanostructures exhibit narrow PL emission up to room temperature around 3.4 μm.

Dates et versions

hal-00325049 , version 1 (26-09-2008)

Identifiants

Citer

V. Tasco, N. Deguffroy, A. N. Baranov, E. Tournié, B. Satpati, et al.. High-density InSb-based quantum dots emitting in the mid-infrared. Journal of Crystal Growth, 2007, 301-302, pp.713-717. ⟨10.1016/j.jcrysgro.2006.09.016⟩. ⟨hal-00325049⟩
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