79GHz Push-Push Oscillators in 0.13µm SiGe BiCMOS Technology - Archive ouverte HAL
Communication Dans Un Congrès Année : 2008

79GHz Push-Push Oscillators in 0.13µm SiGe BiCMOS Technology

Résumé

This paper describes VCO designs based on varactor tuned Push-Push architecture. Two versions (powered under 1.2V and 1.8V) of the 79GHz oscillators have been designed in a 0.13µm SiGe BiCMOS technology, thus targeting automotive Radar and millimeter-wave applications. Their tuning ranges are respectively set on 6GHz (7.6%) and 7GHz (8.8%). The oscillator cores solely consume 18mW and 30mW, and both achieve low phase noise characteristics -102dBc/Hz at 1MHz offset from the carrier frequency (80GHz) and output powers of 18dBm and 0dBm respectively.

Domaines

Electronique
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Dates et versions

hal-00294174 , version 1 (08-07-2008)

Identifiants

  • HAL Id : hal-00294174 , version 1

Citer

Chama Ameziane, Thierry Taris, Robert Plana, Franck Badets, Yann Deval, et al.. 79GHz Push-Push Oscillators in 0.13µm SiGe BiCMOS Technology. IEEE International Conference on Electronics, Circuits, and Systems, Sep 2008, Malta. pp.51-69. ⟨hal-00294174⟩
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