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Communication Dans Un Congrès Année : 2008

Towards Compact Modelling of Schottky Barrier CNTFET

Résumé

Recently, Carbon nanotube field-effect transistors (CNTFETs) have been studied as an interesting alternative to CMOS transistors. CNTFETs can be fabricated with Ohmic or Schottky type contacts. In this paper, we present a compact model for the tunnel current trough a Schottky barrier based on the Wentzel-Kramers-Brillouin, “WKB” approximation of the transmission coefficient [1]. The results obtained with this model are compared with the measured I-V characteristics of a CNT Schottky diode device [2] and show good agreement.
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Dates et versions

hal-00288040 , version 1 (13-06-2008)

Identifiants

  • HAL Id : hal-00288040 , version 1

Citer

Montassar Najari, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, Hassene Mnif, et al.. Towards Compact Modelling of Schottky Barrier CNTFET. IEEE 2008 International Conference on Design & Technology of Integrated Systems in Nanoscale Era, Jun 2008, Tunisia. pp 1-6. ⟨hal-00288040⟩
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