Templates for LaAlO3 epitaxy on silicon - Archive ouverte HAL
Article Dans Une Revue Microelectronics Reliability Année : 2007

Templates for LaAlO3 epitaxy on silicon

Résumé

As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr0.5O monolayer and a 0.5 nm thick γ-Al2O3(0 0 1) layer. We firstly found that in the Sr0.5O monolayer case, care must be taken for the LaAlO3 starting sequence in order to expect good band offsets with silicon. In the γ-Al2O3 case, a more complex engineering of the interface is needed. Nonetheless, we found stable interfaces and a surface reconstruction in agreement with experimental observations. Moreover, these interfaces exhibit insulating properties and insight calculations for a Si–γ-Al2O3–LaAlO3 superstructure lead us to a 1.9 eV conduction band offset.

Dates et versions

hal-00285661 , version 1 (06-06-2008)

Identifiants

Citer

Pierre Boulenc, Isabelle Devos. Templates for LaAlO3 epitaxy on silicon. Microelectronics Reliability, 2007, 47 (4-5), pp.709-713. ⟨10.1016/j.microrel.2007.02.010⟩. ⟨hal-00285661⟩
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