Communication Dans Un Congrès Année : 2008

Optimization of nanopores generated by chemical etching of swift-ion irradiated LiNbO3.

Résumé

The morphology of the nanopores obtained by chemical etching on ion-beam irradiated LiNbO3 has been investigated for a variety of ions (F, Br, Kr, Cu, Pb), energies (up to 2300 MeV), and stopping powers (up to 35 keV/nm) in the electronic energy loss regime. The role of etching time and etching agent on the pore morphology, diameter, depth, and shape has also been studied. The transversal and depth profiles of the pore have been found to be quite sensitive to both, irradiation and etching parameters. Moreover, two etching regimes with different morphologies and etching rates have been identified.

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Dates et versions

hal-00256612 , version 1 (30-07-2008)

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Identifiants

  • HAL Id : hal-00256612 , version 1

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M. Crespillo, M. Otto, A. Muñoz-Martín, J. Olivares, F. Agulló-López, et al.. Optimization of nanopores generated by chemical etching of swift-ion irradiated LiNbO3.. The Seventh International Symposium on Swift Heavy Ions in Matter, Jun 2008, Lyon, France. ⟨hal-00256612⟩
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