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Article Dans Une Revue High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes Année : 2005

In situ laser assisted diagnostics on growth of thick PACVD organosilicon films

Résumé

The purpose of the present work is to determine the growth rate of an organosilicon film during the deposition process. The films are obtained from the chemical decomposition of the 1,1,3,3 TetraMethylDiSilOxane (TMDSO) monomer premixed with oxygen by reaction in the far remote afterglow of a nitrogen microwave discharge. The process control, i.e. the knowledge about the relation between film thickness and deposition duration can only be achieved through in situ diagnostics. In this aim, the optical intensity of a laser beam signal after reflection on the substrate is monitored during deposition. The relevance of the analysis method has been tested for thicknesses close to 17 micrometers. The reproducibility of the signal is discussed according to the film properties. A first determination of the surface roughness has been proposed after comparison with theoretical reflectance. The resulting temporal evolution of the signal is compared with the film's thickness determined by profiler measurements for different deposition durations. Linearity of the growth rate deduced from reflected signal with the effective one has been demonstrated.
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Dates et versions

hal-00247652 , version 1 (08-02-2008)

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Citer

Philippe Supiot, Céline Vivien, M. Aimard, R. Sumera, Bertrand Bocquet. In situ laser assisted diagnostics on growth of thick PACVD organosilicon films. High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, 2005, 9 (2), pp.287-297. ⟨10.1615/HighTempMatProc.v9.i2.110⟩. ⟨hal-00247652⟩
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