Sub-picosecond time-domain measurement of heterojunction bipolar transistors and photodiodes

We demonstrate the time-domain measurement of the dynamic response of heterojunction bipolar transistors (HBT) and uni-travelling carrier photodiodes (UTC-PD) with sub-picosecond resolution. For the HBT, the stimulus is a step applied to the base. For the UTC-PD, we use optical excitation with 150 fs pulses at 1.55 mum. The detection of the electrical response is done using an electroabsorption sampling technique.

Mots clés

Time domain analysis Heterojunction bipolar transistors Photodiodes Ultrafast optics Indium phosphide Optical pumping Optical pulses Indium gallium arsenide Cutoff frequency Laser excitation

Domaines

Sciences de l'ingénieur [physics]

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https://hal.science/hal-00243970

Soumis le : jeudi 7 février 2008-10:26:51

Dernière modification le : mercredi 24 janvier 2024-09:54:18

Dates et versions

hal-00243970 , version 1 (07-02-2008)

Identifiants

HAL Id : hal-00243970 , version 1
DOI : 10.1109/ICIMW.2006.368718

Citer

Alexandre Beck, Jean-Francois Lampin, Mohammed Zaknoune, L. Desplanque, Francis Mollot. Sub-picosecond time-domain measurement of heterojunction bipolar transistors and photodiodes. Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, Sep 2006, Shanghai, China. pp.510, ⟨10.1109/ICIMW.2006.368718⟩. ⟨hal-00243970⟩

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