“2 to 23 GHz BiFET Low Noise Amplifier design flow and implementations in 0.25µm SiGe BiCMOS technology”
Résumé
Abstract – Two BiFET LNAs are here reported, implemented in a 0.25µm BiCMOS technology from ST Microelectronics. First of them depicts at 15.5dB and 2.85dB, S21 and Noise Figure (NF) respectively, under 2mA current consumption. The second realization operates at 23GHz for Mini-Link application. It provides a 14dB gain and 7dB@22GHz NF for a 8.2 mA current consumption under 2.5 V. Both circuits were designed according to a design flow.