Article Dans Une Revue Solid-State Electronics Année : 2007

High threshold voltage matching performance on gate-all-around MOSFET

Résumé

For the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on Gate-All-Around transistors (GAA) with both doped and undoped channels. Good matching performance is demonstrated on doped channel transistors, thanks to the absence of pocket nor halo implants. But most of all, it is shown that suppressing the channel doping allows to drastically reduce the dopant induced fluctuations contribution and provides an parameter as low as 1.4 mV μm, which is one of the best reported result on MOS transistors.

Dates et versions

hal-00196042 , version 1 (12-12-2007)

Identifiants

Citer

A. Cathignol, A. Cros, S. Harrison, R. Cerrutti, P. Coronel, et al.. High threshold voltage matching performance on gate-all-around MOSFET. Solid-State Electronics, 2007, 51 (11-12), pp.1450-1457. ⟨10.1016/j.sse.2007.09.033⟩. ⟨hal-00196042⟩
194 Consultations
0 Téléchargements

Altmetric

Partager

  • More