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Article Dans Une Revue Journal of Crystal Growth Année : 2002

Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

Résumé

In order to reach fast growth regime, we have investigated the SiC homoepitaxial growth on off-axis 4H-SiC substrates from a vapour–liquid–solid (VLS) mechanism in a vertical cold wall CVD reactor. The experiments involved silane and propane diluted in hydrogen as feeding vapour phase and melted silicon as ‘‘liquid catalyst''. Growth rates up to 25 mm/h at 1500°C and 35 mm/h at 1600°C with a bunched step-terrace structure are demonstrated in such a system. The formation and stability of the VLS equilibrium is discussed with respect to the experimental parameters and a first approach of the mechanism is proposed.
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Dates et versions

hal-00187136 , version 1 (13-11-2007)

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  • HAL Id : hal-00187136 , version 1

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Didier Chaussende, Gabriel Ferro, Yves Monteil. Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE. Journal of Crystal Growth, 2002, 234, pp.63-69. ⟨hal-00187136⟩
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