Role of SIMOX defects on the structural properties of b-SiC:SIMOX - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science and Engineering: B Année : 1999

Role of SIMOX defects on the structural properties of b-SiC:SIMOX

Résumé

We have investigated the role of microscopic defects, which usually are present at very low density in the thin silicon overlayer (SOL) of SIMOX wafers, on the final structural properties of b-SiC grown on top of this material. To modify the defects density we have used different wafers with SOL thickness of 150, 100 and 50 nm, respectively. After SiC deposition, we have found that the density of defects (mainly holes running through the SiC films and underlying cavities) follows, roughly speaking, the concentration of initial defects in the SOL. Taking into account the diffusion of atomic species and the different possible chemical reactions, the microscopic mechanism of holes and cavities formation is discussed.

Domaines

Matériaux
Fichier non déposé

Dates et versions

hal-00186941 , version 1 (13-11-2007)

Identifiants

  • HAL Id : hal-00186941 , version 1

Citer

Gabriel Ferro, Nicolas Planes, Victoria Papaioannou, Didier Chaussende, Yves Monteil, et al.. Role of SIMOX defects on the structural properties of b-SiC:SIMOX. Materials Science and Engineering: B, 1999, 61-62, pp.586-592. ⟨hal-00186941⟩
90 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More